Conducting, passivating, and transparent: Development of a SiO2/nc-SiC:H(n) front contact for crystalline silicon solar cells

When: 
19 March 2020 - 12:00pm
Venue: 
UNSW SPREE TETB Building H6 LG07

Conducting, passivating, and transparent: Development of a SiO2/nc-SiC:H(n) front contact  for crystalline silicon solar cells

Location and time: Thursday, 19th March, 12:00 in TETB LG07

SPEAKER: Malte Köhler (Jülich)

ABSTRACT:

Developing front side contacts for silicon solar cells is a triple challenge of high Voc, high FF, and high Jsc. Passivating contacts e.g. a-Si:H or SiO2/poly-Si contacts are known to achieve high Voc and high FF. However, when used on the sun facing front side of solar cells the Jsc is limited due to parasitic absorption. We developed a transparent passivating contact consisting of a silicon tunnel oxide (SiO2) a wide bandgap nanocrystalline silicon carbide (nc-SiC:H(n)), and an indium-tin oxide (ITO) to reduce parasitic absorption. By optimizing the deposition conditions of nc-SiC:H(n) and ITO we achieved a certified efficiency of 23.99% with Voc = 725 mV, FF = 80.9% and Jsc = 40.9 mA/cm2.

SHORT BIOGRAPHY:

From 2010 – 2013 Malte has studied a Bachelor of Engineering as an integrated degree program in Photovoltaics at the Anhalt University of Applied Science in cooperation with the Fraunhofer Center for Silicon Photovoltaics (CSP) Halle (Saale), Germany. He received his Master of Science in Engineering Physics in 2016 from the University of Oldenburg, Germany. Since 2016 he is a PhD student at the Research Center Jülich in the group of silicon heterojunction solar cells. His PhD focuses on the development of a transparent passivating contact for crystalline silicon solar cells.

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